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NTB65N02R, NTP65N02R
2000
C iss
V DS = 0 V
V GS = 0 V
T J = 25 ° C
5
Q T
10
1600
4
V DS
1200
3
Q GS
Q GD
V GS
8
C iss
6
800
C rss
C oss
2
4
400
0
10
5
V GS
0
V DS
5
10
C rss
15
20
1
0
0
2
4
6
8
I D = 30 A
T J = 25 ° C
10
12
2
0
1000
100
GATE?TO?SOURCE OR DRAIN?TO?SOURCE VOLTAGE
(V)
Figure 7. Capacitance Variation
V DS = 10 V
I D = 30 A
V GS = 10 V
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate?to?Source and Drain?to?Source
Voltage versus Total Charge
60
50
40
t r
30
t d(off)
10
t f
20
1
t d(on)
10
0
T J = 150 ° C
T J = 25 ° C
1
10
100
0
0.2
0.4
0.6
0.8
1
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
V SD , SOURCE?TO?DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
1000
V GS = 20 V
SINGLE PULSE
T C = 25 ° C
100
10 m s
100 m s
10
1 ms
R DS(ON) LIMIT
THERMAL LIMIT
10 ms
dc
1
PACKAGE LIMIT
0.1
1
10
100
V DS , DRAIN?TO?SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased Safe Operating Area
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